类别是'category.MOSFETs 晶体管阵列' (10000)
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对比 | 图片 | 产品型号 | 品牌 | 数据表 | 库存 | 价格(含增值税) | 数量 | Rohs | 工厂交货时间 | 生命周期状态 | 底架 | 安装类型 | 包装/外壳 | 表面安装 | 引脚数 | 供应商器件包装 | 晶体管元件材料 | 操作温度 | 包装 | 已出版 | 系列 | JESD-609代码 | 无铅代码 | 零件状态 | 湿度敏感性等级(MSL) | 终止次数 | ECCN 代码 | 端子表面处理 | 最高工作温度 | 最小工作温度 | 附加功能 | HTS代码 | 电压 - 额定直流 | 最大功率耗散 | 端子位置 | 终端形式 | 峰值回流焊温度(摄氏度) | Reach合规守则 | 额定电流 | 时间@峰值回流温度-最大值(s) | 基本部件号 | 引脚数量 | JESD-30代码 | 资历状况 | 配置 | 元素配置 | 操作模式 | 功率耗散 | 箱体转运 | 功率 - 最大 | 场效应管类型 | 晶体管应用 | Rds On(Max)@Id,Vgs | 不同 Id 时 Vgs(th)(最大值) | 输入电容(Ciss)(Max)@Vds | 门极电荷(Qg)(最大)@Vgs | 上升时间 | 漏源电压 (Vdss) | 极性/通道类型 | 下降时间(典型值) | 连续放电电流(ID) | JEDEC-95代码 | 栅极至源极电压(Vgs) | 最大漏极电流 (Abs) (ID) | 漏极-源极导通最大电阻 | 漏源击穿电压 | 脉冲漏极电流-最大值(IDM) | 输入电容 | DS 击穿电压-最小值 | 雪崩能量等级(Eas) | 场效应管技术 | 最大耗散功率(Abs) | 场效应管特性 | 漏源电阻 | 最大rds | 辐射硬化 | RoHS状态 | 无铅 | |||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
FDMJ1028N | ON Semiconductor | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 表面贴装 | 表面贴装 | 6-WFDFN Exposed Pad | 8 | 6-MicroFET (2x2) | 3.2A | 2 | -55°C~150°C TJ | Tape & Reel (TR) | 2001 | PowerTrench® | Obsolete | 1 (Unlimited) | 150°C | -55°C | 20V | 800mW | 3.2A | Dual | 1.4W | 800mW | 2 N-Channel (Dual) | 90mOhm @ 3.2A, 4.5V | 1.5V @ 250μA | 200pF @ 10V | 3nC @ 4.5V | 20V | 3.2A | 12V | 20V | 200pF | 逻辑电平门 | 76mOhm | 90 mΩ | 符合RoHS标准 | 无铅 | ||||||||||||||||||||||||||||||||||||||||
![]() | DMN3012LFG-13 | Diodes Incorporated | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 21 Weeks | 表面贴装 | 8-PowerLDFN | 20A Tc | -55°C~150°C TJ | Tape & Reel (TR) | e3 | Obsolete | 1 (Unlimited) | EAR99 | Matte Tin (Sn) | 未说明 | 未说明 | 2.2W | 2 N-Channel (Dual) | 12m Ω @ 15A, 5V, 6m Ω @ 15A, 5V | 2.1V @ 250μA, 1.15V @ 250μA | 850pF @ 15V 1480pF @ 15V | 6.1nC @ 4.5V, 12.6nC @ 4.5V | 30V | Standard | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||
VEC2616-TL-W-Z | ON Semiconductor | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 14 Weeks | 表面贴装 | 表面贴装 | 8-SMD, Flat Lead | 3A 2.5A | 150°C TJ | Tape & Reel (TR) | Obsolete | 1 (Unlimited) | 1W | N and P-Channel | 80m Ω @ 1.5A, 10V | 2.6V @ 1mA | 505pF @ 20V | 10nC @ 10V | 60V | 2.5A | Logic Level Gate, 4V Drive | 符合RoHS标准 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | FDG6322C_D87Z | ON Semiconductor | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 表面贴装 | 6-TSSOP, SC-88, SOT-363 | SC-88 (SC-70-6) | 220mA 410mA | -55°C~150°C TJ | Tape & Reel (TR) | Obsolete | 1 (Unlimited) | 300mW | N and P-Channel | 4Ohm @ 220mA, 4.5V | 1.5V @ 250μA | 9.5pF @ 10V | 0.4nC @ 4.5V | 25V | 逻辑电平门 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | AO8810#A | Alpha & Omega Semiconductor Inc. | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 表面贴装 | 表面贴装 | 8-TSSOP (0.173, 4.40mm Width) | -55°C~150°C TJ | Bulk | Obsolete | 1 (Unlimited) | 1.5W | 1.5W | 2 N-Channel (Dual) Common Drain | 20m Ω @ 7A, 4.5V | 1.1V @ 250μA | 1295pF @ 10V | 14nC @ 4.5V | 20V | 7A | 逻辑电平门 | 符合RoHS标准 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | SLA5065 LF830 | Sanken | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 12 Weeks | 通孔 | 15-SIP | 7A | 150°C TJ | Tube | 2008 | 活跃 | 1 (Unlimited) | 4.8W | 4 N-Channel | 100m Ω @ 3.5A, 10V | 2V @ 250μA | 660pF @ 10V | 60V | Standard | 符合RoHS标准 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
CTLDM303N-M832DS TR | Central Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 6 Weeks | 表面贴装 | 8-TDFN Exposed Pad | YES | SILICON | 3.6A | 2 | -55°C~150°C TJ | Cut Tape (CT) | 2014 | Obsolete | 1 (Unlimited) | 8 | EAR99 | 8541.29.00.95 | 无铅 | compliant | R-PDSO-N8 | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | 增强型MOSFET | DRAIN | 1.65W | 2 N-Channel (Dual) | SWITCHING | 40m Ω @ 1.8A, 4.5V | 1.2V @ 250μA | 590pF @ 10V | 13nC @ 4.5V | 30V | 3.6A | 0.078Ohm | 30V | METAL-OXIDE SEMICONDUCTOR | Standard | ||||||||||||||||||||||||||||||||||||||||||
![]() | APTMC120TAM33CTPAG | Microsemi Corporation | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 22 Weeks | IN PRODUCTION (Last Updated: 1 month ago) | 底座安装 | 底座安装 | SP6 | 6 | 78A Tc | 6 | -40°C~150°C TJ | Bulk | 1997 | 活跃 | 1 (Unlimited) | 23 | EAR99 | 370W | UPPER | UNSPECIFIED | R-XUFM-X23 | 3 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR | 增强型MOSFET | ISOLATED | 6 N-Channel (3-Phase Bridge) | SWITCHING | 33m Ω @ 60A, 20V | 2.2V @ 3mA (Typ) | 2850pF @ 1000V | 148nC @ 20V | 1200V 1.2kV | 78A | 0.033Ohm | 155A | 1200V | METAL-OXIDE SEMICONDUCTOR | Silicon Carbide (SiC) | 符合RoHS标准 | |||||||||||||||||||||||||||||||||||||||
MMDF1N05ER2 | ON Semiconductor | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | OBSOLETE (Last Updated: 2 weeks ago) | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | 2 | 40 ns | Cut Tape (CT) | 2006 | e0 | no | Obsolete | 1 (Unlimited) | 8 | Tin/Lead (Sn/Pb) | 150°C | -55°C | 逻辑电平兼容 | 50V | 2W | 鸥翼 | 240 | not_compliant | 1A | 30 | MMDF1N05E | 8 | 不合格 | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | 增强型MOSFET | 2W | 2 N-Channel (Dual) | SWITCHING | 300m Ω @ 1.5A, 10V | 3V @ 250μA | 330pF @ 25V | 12.5nC @ 10V | 30ns | 25 ns | 2A | 20V | 2A | 0.3Ohm | 50V | 10A | 300 mJ | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | Non-RoHS Compliant | 含铅 | ||||||||||||||||||||||||||
![]() | IRF7301PBF | Infineon Technologies | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | YES | SILICON | 5.2A | 2 | -55°C~150°C TJ | Tube | 1996 | HEXFET® | e3 | Discontinued | 1 (Unlimited) | 8 | EAR99 | Matte Tin (Sn) | 鸥翼 | 未说明 | 未说明 | IRF7301PBF | R-PDSO-G8 | 不合格 | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | 增强型MOSFET | 2W | 2 N-Channel (Dual) | SWITCHING | 50m Ω @ 2.6A, 4.5V | 700mV @ 250μA | 660pF @ 15V | 20nC @ 4.5V | 20V | MS-012AA | 5.2A | 0.05Ohm | 21A | 20V | METAL-OXIDE SEMICONDUCTOR | 1.4W | 逻辑电平门 | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||
![]() | IRF7103PBF | Infineon Technologies | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 12 Weeks | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | YES | SILICON | 3A | 2 | -55°C~150°C TJ | Tube | 1997 | HEXFET® | e3 | Discontinued | 1 (Unlimited) | 8 | EAR99 | Matte Tin (Sn) | 鸥翼 | 260 | 30 | IRF7103PBF | R-PDSO-G8 | 不合格 | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | 增强型MOSFET | 2W | 2 N-Channel (Dual) | SWITCHING | 130m Ω @ 3A, 10V | 3V @ 250μA | 290pF @ 25V | 30nC @ 10V | 50V | MS-012AA | 3A | 0.13Ohm | 10A | 50V | METAL-OXIDE SEMICONDUCTOR | 2W | Standard | ROHS3 Compliant | |||||||||||||||||||||||||||||||||
![]() | AO8801A | Alpha & Omega Semiconductor Inc. | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 16 Weeks | 表面贴装 | 表面贴装 | 8-TSSOP (0.173, 4.40mm Width) | 8 | 2 | -55°C~150°C TJ | Tape & Reel (TR) | 2007 | 最后一次购买 | 1 (Unlimited) | 1.5W | 1.5W | 2 P-Channel (Dual) | 42m Ω @ 4.5A, 4.5V | 900mV @ 250μA | 905pF @ 10V | 11nC @ 4.5V | 20V | 4.5A | 8V | 逻辑电平门 | 无 | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | ALD110804PCL | Advanced Linear Devices Inc. | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 8 Weeks | 通孔 | 通孔 | 16-DIP (0.300, 7.62mm) | 16 | 12mA 3mA | 10 ns | 0°C~70°C TJ | Tube | 2006 | EPAD® | yes | 活跃 | 1 (Unlimited) | 500mW | unknown | 500mW | 4 N-Channel, Matched Pair | 500 Ω @ 4.4V | 420mV @ 1μA | 2.5pF @ 5V | 3mA | 10.6V | 10V | Standard | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||
![]() | FS45MR12W1M1B11BOMA1 | Infineon Technologies | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 16 Weeks | 底座安装 | Module | 25A Tj | -40°C~150°C TJ | CoolSiC™+ | 活跃 | 1 (Unlimited) | 20mW Tc | 6 N-Channel (3-Phase Bridge) | 45m Ω @ 25A, 15V (Typ) | 5.55V @ 10mA | 1840pF @ 800V | 62nC @ 15V | 1200V | Silicon Carbide (SiC) | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BSM250D17P2E004 | ROHM Semiconductor | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 25 Weeks | 底座安装 | Module | 250A Tc | -40°C~150°C TJ | 活跃 | 1 (Unlimited) | 1800W Tc | 2 N-Channel (Half Bridge) | 4V @ 66mA | 30000pF @ 10V | 1700V 1.7kV | Silicon Carbide (SiC) | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SH8K39GZETB | ROHM Semiconductor | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 16 Weeks | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8A Ta | 150°C TJ | Cut Tape (CT) | 活跃 | 1 (Unlimited) | 未说明 | 未说明 | 1.4W Ta | 2 N-Channel (Dual) | 21m Ω @ 8A, 10V | 2.7V @ 200μA | 1240pF @ 30V | 25nC @ 10V | 60V | Standard | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | IPG20N06S2L35ATMA1 | Infineon Technologies | 数据表 | N/A |
- | 最小起订量: 1 最小包装量: 1 | 10 Weeks | 表面贴装 | 8-PowerVDFN | YES | SILICON | 2 | 20A | -55°C~175°C TJ | Tape & Reel (TR) | 2009 | Automotive, AEC-Q101, OptiMOS™ | 活跃 | 1 (Unlimited) | EAR99 | FLAT | 未说明 | 未说明 | *PG20N06 | R-PDSO-F | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | 增强型MOSFET | 65W | 2 N-Channel (Dual) | 35m Ω @ 15A, 10V | 2V @ 27μA | 790pF @ 25V | 23nC @ 10V | 55V | 20A | 0.035Ohm | 80A | 55V | 100 mJ | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||
![]() | SSD2025TF | Rochester Electronics, LLC | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | YES | SILICON | 3.3A | 2 | -55°C~150°C TJ | Tape & Reel (TR) | e0 | no | Obsolete | 1 (Unlimited) | 8 | 锡铅 | 鸥翼 | 260 | 未说明 | 8 | R-PDSO-G8 | COMMERCIAL | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | 增强型MOSFET | 2W | 2 N-Channel (Dual) | SWITCHING | 100m Ω @ 3.3A, 10V | 1V @ 250μA | 30nC @ 10V | 60V | 3.3A | 0.1Ohm | 10A | 60V | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | Non-RoHS Compliant | |||||||||||||||||||||||||||||||||||||||
![]() | FF8MR12W2M1B11BOMA1 | Infineon Technologies | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 16 Weeks | 底座安装 | Module | 150A Tj | -40°C~150°C TJ | CoolSiC™+ | 活跃 | 1 (Unlimited) | 20mW Tc | 2 N-Channel (Dual) | 7.5m Ω @ 150A, 15V (Typ) | 5.55V @ 60mA | 11000pF @ 800V | 372nC @ 15V | 1200V | Silicon Carbide (SiC) | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | FF45MR12W1M1B11BOMA1 | Infineon Technologies | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 16 Weeks | 底座安装 | Module | 25A Tj | -40°C~150°C TJ | CoolSiC™+ | 活跃 | 1 (Unlimited) | 20mW Tc | 2 N-Channel (Dual) | 45m Ω @ 25A, 15V (Typ) | 5.55V @ 10mA | 1840pF @ 800V | 62nC @ 15V | 1200V | Silicon Carbide (SiC) | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | DF11MR12W1M1B11BPSA1 | Infineon Technologies | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 16 Weeks | 底座安装 | Module | 50A Tj | -40°C~150°C TJ | CoolSiC™+ | 活跃 | 不适用 | 20mW | 2 N-Channel (Dual) | 22.5m Ω @ 50A, 15V | 5.55V @ 20mA | 3680pF @ 800V | 124nC @ 15V | 1200V | Silicon Carbide (SiC) | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
EM6K7T2CR | ROHM Semiconductor | 数据表 | 16000 In Stock | - | 最小起订量: 1 最小包装量: 1 | 16 Weeks | 表面贴装 | SOT-563, SOT-666 | YES | SILICON | 200mA Ta | 2 | 150°C TJ | Cut Tape (CT) | 活跃 | 1 (Unlimited) | 6 | FLAT | 未说明 | 未说明 | R-PDSO-F6 | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | 增强型MOSFET | 150mW | 2 N-Channel (Dual) | SWITCHING | 1.2 Ω @ 200mA, 2.5V | 1V @ 1mA | 25pF @ 10V | 20V | 0.2A | 1.4Ohm | 20V | METAL-OXIDE SEMICONDUCTOR | Standard | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||
NVMFD6H840NLT1G | ON Semiconductor | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 48 Weeks | 表面贴装 | 8-PowerTDFN | 14A Ta 74A Tc | -55°C~175°C TJ | Tape & Reel (TR) | Automotive, AEC-Q101 | yes | 活跃 | 1 (Unlimited) | 2 N-Channel (Dual) | 6.9m Ω @ 20A, 10V | 2V @ 96μA | 2002pF @ 40V | 32nC @ 10V | 80V | Standard | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
UT6MA2TCR | ROHM Semiconductor | 数据表 | 970 In Stock | - | 最小起订量: 1 最小包装量: 1 | 16 Weeks | 表面贴装 | 8-PowerUDFN | YES | SILICON | 4A Ta | 2 | 150°C TJ | Cut Tape (CT) | 活跃 | 1 (Unlimited) | 6 | DUAL | 无铅 | 未说明 | 未说明 | S-PDSO-N6 | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | 增强型MOSFET | DRAIN | 2W Ta | N and P-Channel | SWITCHING | 46m Ω @ 4A, 10V, 70m Ω @ 4A, 10V | 2.5V @ 1mA | 180pF 305pF @ 15V | 4.3nC, 6.7nC @ 10V | 30V | N-CHANNEL AND P-CHANNEL | 4A | 0.08Ohm | 12A | 30V | 6.4 mJ | METAL-OXIDE SEMICONDUCTOR | Standard | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||
![]() | NDS9933A | Rochester Electronics, LLC | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | YES | SILICON | 2.8A | 2 | -55°C~150°C TJ | Tape & Reel (TR) | e3 | yes | Obsolete | 1 (Unlimited) | 8 | 哑光锡 | 鸥翼 | 260 | 未说明 | 8 | R-PDSO-G8 | COMMERCIAL | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | 增强型MOSFET | 900mW | 2 P-Channel (Dual) | SWITCHING | 140m Ω @ 2.8A, 4.5V | 1V @ 250μA | 405pF @ 10V | 8.5nC @ 4.5V | 20V | 2.8A | 0.14Ohm | 10A | 20V | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | ROHS3 Compliant |
FDMJ1028N
ON Semiconductor
分类:Transistors - FETs, MOSFETs - Arrays
DMN3012LFG-13
Diodes Incorporated
分类:Transistors - FETs, MOSFETs - Arrays
VEC2616-TL-W-Z
ON Semiconductor
分类:Transistors - FETs, MOSFETs - Arrays
FDG6322C_D87Z
ON Semiconductor
分类:Transistors - FETs, MOSFETs - Arrays
AO8810#A
Alpha & Omega Semiconductor Inc.
分类:Transistors - FETs, MOSFETs - Arrays
SLA5065 LF830
Sanken
分类:Transistors - FETs, MOSFETs - Arrays
CTLDM303N-M832DS TR
Central Semiconductor Corp
分类:Transistors - FETs, MOSFETs - Arrays
APTMC120TAM33CTPAG
Microsemi Corporation
分类:Transistors - FETs, MOSFETs - Arrays
MMDF1N05ER2
ON Semiconductor
分类:Transistors - FETs, MOSFETs - Arrays
IRF7301PBF
Infineon Technologies
分类:Transistors - FETs, MOSFETs - Arrays
IRF7103PBF
Infineon Technologies
分类:Transistors - FETs, MOSFETs - Arrays
AO8801A
Alpha & Omega Semiconductor Inc.
分类:Transistors - FETs, MOSFETs - Arrays
ALD110804PCL
Advanced Linear Devices Inc.
分类:Transistors - FETs, MOSFETs - Arrays
FS45MR12W1M1B11BOMA1
Infineon Technologies
分类:Transistors - FETs, MOSFETs - Arrays
BSM250D17P2E004
ROHM Semiconductor
分类:Transistors - FETs, MOSFETs - Arrays
SH8K39GZETB
ROHM Semiconductor
分类:Transistors - FETs, MOSFETs - Arrays
IPG20N06S2L35ATMA1
Infineon Technologies
分类:Transistors - FETs, MOSFETs - Arrays
7.085424
SSD2025TF
Rochester Electronics, LLC
分类:Transistors - FETs, MOSFETs - Arrays
FF8MR12W2M1B11BOMA1
Infineon Technologies
分类:Transistors - FETs, MOSFETs - Arrays
FF45MR12W1M1B11BOMA1
Infineon Technologies
分类:Transistors - FETs, MOSFETs - Arrays
DF11MR12W1M1B11BPSA1
Infineon Technologies
分类:Transistors - FETs, MOSFETs - Arrays
EM6K7T2CR
ROHM Semiconductor
分类:Transistors - FETs, MOSFETs - Arrays
NVMFD6H840NLT1G
ON Semiconductor
分类:Transistors - FETs, MOSFETs - Arrays
UT6MA2TCR
ROHM Semiconductor
分类:Transistors - FETs, MOSFETs - Arrays
NDS9933A
Rochester Electronics, LLC
分类:Transistors - FETs, MOSFETs - Arrays
